研究目的
Investigating the extension of absorption coverage and enhancement of quantum efficiency in germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors across the L-band.
研究成果
Recessed SiNx-strained GOI MSM photodetectors achieved a ~60 nm extension on absorption coverage and a ~2× enhancement on quantum efficiency across the L-band, extending Ge for broadband high-speed integrated photonics.
研究不足
The study focuses on the L-band and may not cover other wavelength bands. The fabrication process is complex and requires precise control.
1：Experimental Design and Method Selection:
The study employed recessed silicon nitride (SiNx) sidewall stressor to induce uniform tensile strain in Ge for extended-wavelength photo-detection.
2：Sample Selection and Data Sources:
GOI MSM photodetectors were fabricated based on modelled structures.
3：List of Experimental Equipment and Materials:
Electron-beam lithography (EBL), reactive-ion etching (RIE), atomic layer deposition (ALD), plasma-enhanced chemical vapor deposition (PECVD), and a TUNICS T100S-HP/CL tunable laser were used.
4：Experimental Procedures and Operational Workflow:
Fabrication involved patterning GOI into strip waveguides, forming recessed trenches, depositing Al2O3, fabricating Schottky contacts, and depositing SiNx stressor.
5：Data Analysis Methods:
Photocurrents were measured and normalized for comparison.
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