研究目的
Investigating the photoluminescence enhancement phenomena in photonic crystal slabs fabricated on Si structures with self-assembled Ge nanoislands.
研究成果
The study demonstrated a strong enhancement of photoluminescence intensity in photonic crystal slabs fabricated on Si structures with self-assembled Ge nanoislands, attributed to the interaction between nanoislands and photonic crystal modes. The findings highlight the potential of these structures for optoelectronic applications.
研究不足
The study is limited to room temperature measurements and specific lattice periods of photonic crystal slabs. The interaction mechanisms between Ge nanoislands and photonic crystal modes may vary under different conditions.
1：Experimental Design and Method Selection:
The study involved the fabrication of photonic crystal slabs on Si structures with self-assembled Ge nanoislands using electron beam lithography and ICP/RF plasma etching techniques. Two experimental schemes were applied: standard micro-PL schema and schema for radiation pattern analysis.
2：Sample Selection and Data Sources:
Multilayer Si structures containing 5 layers of Ge nanoislands grown on SOI substrates were used.
3：List of Experimental Equipment and Materials:
Mitutoyo M Plan APO objective with 10x magnification (NA=
4：26), solid-state laser at 532 nm, Ge detector, Fourier spectrometer Bruker IFS 125 HR. Experimental Procedures and Operational Workflow:
The luminescence signal was excited and detected in normal incidence geometry and under oblique incidence for radiation pattern analysis.
5：Data Analysis Methods:
The photoluminescence spectra were recorded with high spectral resolution, and theoretical simulations were performed using the finite element method and the method of scattering-matrix.
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