研究目的
Investigating the electroluminescence properties of GeSn/SiGeSn heterostructures LEDs versus temperature and showing the importance of having a direct band-gap active material with the highest splitting energy possible between the Γ- and the L valleys and SiGeSn barriers.
研究成果
The study demonstrates that higher Sn content in GeSn LEDs, particularly with SiGeSn barriers, significantly enhances electroluminescence due to increased splitting energy between Γ and L valleys. A consistent activation energy for defects suggests a common non-radiative recombination process across different Sn concentrations. The findings advance the development of efficient electrical direct band-gap light sources on a Si photonic platform.
研究不足
The study is limited by the specific Sn content range (6% to 16%) and the use of SiGeSn barriers. The detection setup varied for different Sn contents, preventing direct comparison of electroluminescence intensities across all samples.
1：Experimental Design and Method Selection:
The study involved growing vertical GeSn LEDs with varying Sn contents and with or without SiGeSn barriers using RPCVD. Temperature-dependent electroluminescence measurements were conducted to analyze direct band-gap behaviors and defect activation energies.
2：Sample Selection and Data Sources:
GeSn and SiGeSn alloys were grown on Ge Strain Relaxed Buffers (SRBs) with Sn contents ranging from 6% to 16%. The electroluminescence signal was collected and analyzed using a monochromator and photodetectors.
3：6%. The electroluminescence signal was collected and analyzed using a monochromator and photodetectors.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: A 200 mm Epi Centura 5200 RPCVD tool was used for growth, with Ge2H6, Si2H6, and SnCl4 as precursors. Mesa-LEDs were fabricated using lithography and dry-etching techniques.
4：Experimental Procedures and Operational Workflow:
The growth process involved in-situ boron and phosphorus doping for p- and n-type regions, respectively. Devices were encapsulated with SiO2 and contacted with NiPt, Ti, and Au.
5：Data Analysis Methods:
The electroluminescence spectra were recorded and analyzed to determine the impact of Sn content and SiGeSn barriers on LED performance.
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