研究目的
Investigating the effects of deposition temperature on the electrical properties of CdTe thin films deposited by close-spaced sublimation (CSS) technique for solar cell applications.
研究成果
The CdTe thin film deposited at 650 0C source temperature showed better electrical properties for solar cell applications, with the highest carrier concentration among the p-type films. The study provides insights into the optimization of deposition parameters for CdTe thin films in solar cell applications.
研究不足
The study is limited to the investigation of electrical properties of CdTe thin films deposited by CSS technique under specific conditions. The effects of other deposition parameters and long-term stability of the films were not explored.
1：Experimental Design and Method Selection:
CdTe thin films were deposited on CdS thin films by CSS technique at different source and substrate temperatures in inert gas condition. The process pressure was maintained at 1.5 Torr in a dynamic condition.
2：5 Torr in a dynamic condition.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: 3 cm × 3 cm borosilicate glass substrates were used. CdS thin films were deposited by RF sputtering under 3.9 mTorr working pressure.
3：9 mTorr working pressure.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: CSS equipment, RF sputtering machine, Quartz Crystal-deposition Monitor (QCM), ECOPIA Hall effect measurement system (HMS-3000).
4：0).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Substrates were cleaned and CdS films were deposited. CdTe films were deposited at four different source temperatures. Electrical properties were measured by Hall Effect measurement system.
5：Data Analysis Methods:
The carrier concentration, mobility, and resistivity were analyzed using the Hall Effect measurement system.
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