研究目的
To demonstrate a high speed and high power photodiode with modified uni-traveling carrier (MUTC) structure for microwave photonics systems.
研究成果
The demonstrated photodiode with 10 μm diameter achieves a 3dB bandwidth of 50 GHz at -3 V bias voltage and works well at 20 mA photocurrent, indicating its suitability for high speed and high power applications in microwave photonics systems.
研究不足
The bandwidth of the photodiode is limited by the RC time constant, and the study does not explore the impact of anti-reflection coating on responsivity.
1：Experimental Design and Method Selection:
The study focuses on the design and fabrication of a photodiode with MUTC structure for high speed and high power applications. The methodology includes molecular beam epitaxy for epitaxial layer growth, lithography and wet etching for device fabrication, and backside polishing for back side illumination.
2：Sample Selection and Data Sources:
The photodiodes were fabricated with different diameters (10 μm and 16 μm) to study the effect of device size on performance.
3：List of Experimental Equipment and Materials:
Equipment includes a semiconductor parameter analyzer for dark current measurement, tunable lasers for frequency response measurement, and a microwave power meter for RF response measurement.
4：Experimental Procedures and Operational Workflow:
The frequency response was measured using two 1550 nm tunable lasers heterodyned to generate an intensity-variant continuous wave light. The RF response was measured by a microwave power meter.
5：Data Analysis Methods:
The response speed and power handling ability were analyzed based on the 3dB bandwidth and responsivity measurements.
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