研究目的
Investigating the optoelectronic properties of CdSexTe1?x alloys in the zincblende and wurtzite structures for improved solar cell absorber layer materials.
研究成果
The study provides a thorough understanding of the structural, thermodynamic, and optoelectronic properties of CdSexTe1?x alloys in the zincblende and wurtzite structures. It highlights the potential benefits of these alloys for photovoltaics, particularly at low to moderate Se concentrations in the zincblende structure, due to downward bowing in the band gap and effective hole mass. The presence of short-range order and its effect on the band gap is also identified, suggesting that both composition and short-range order can be utilized to fine-tune the optoelectronic properties of solar cell absorber layer materials.
研究不足
The study is limited by the computational methods used, which may not capture all physical phenomena accurately. The accuracy of the band gap calculations, especially for the wurtzite structure, is noted to be less than that for the zincblende structure. Experimental validation of the subtle changes in optoelectronic properties is recommended.
1:Experimental Design and Method Selection
First principles methods based on density functional theory and beyond were employed to study CdSexTe1?x alloys. The cluster expansion formalism was used to provide a detailed phase diagram. Disordered CdSexTe1?x configurations were modeled using special quasirandom structures, and optoelectronic properties were computed with the hybrid HSE06 functional.
2:Sample Selection and Data Sources
CdSexTe1?x alloys in the zincblende and wurtzite structures were studied. The samples were modeled using special quasirandom structures at concentrations of x = 0.25, 0.50, and 0.75.
3:List of Experimental Equipment and Materials
Vienna Ab initio Simulation package (VASP) was used for all density functional theory calculations. The projector augmented wave (PAW) method was employed with the generalized gradient approximation (GGA) in the form of the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional.
4:Experimental Procedures and Operational Workflow
Calculations were carried out on Γ-centered k-point meshes consisting of 4000 k-points per reciprocal atom (KPPRA). Electronic minimizations with a convergence criterion of 10?6 eV/atom were performed using the tetrahedron method with Bl?chl corrections. Initial structural configurations of CdTe and CdSe in the zincblende and wurtzite structures were taken from the Materials Project and geometrically optimized until forces acting on each atom were less than 0.01 eV/?.
5:Data Analysis Methods
The electronic density of states (DOS) and frequency-dependent complex dielectric function (ε1 + iε2) for each compound were calculated. From the latter values, derived optical properties such as absorption coefficient and reflectivity were determined. Effective masses of electrons and holes were calculated using the BoltzTraP package.
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