研究目的
Investigating the plasmonic response of GaAs/In0.20Ga0.80As core/shell nanowires under strong THz fields to understand nonlinear interaction effects.
研究成果
The nonlinear interaction of intense THz pulses with GaAs/In0.20Ga0.80As core/shell nanowires leads to a redshift of the localized surface plasmon resonance and spectral weight suppression, driven by intervalley electron scattering. This opens avenues for THz frequency conversion using plasmonic nanostructures.
研究不足
The study is limited by the spatial inhomogeneity of carrier distribution across the nanowire and the specific conditions of THz field strength.
1：Experimental Design and Method Selection:
Optical pump-THz probe (OPTP) spectroscopy was used to investigate the plasmonic resonance in GaAs/In
2：20Ga80As core/shell nanowires. Sample Selection and Data Sources:
GaAs/In
3：20Ga80As core/shell nanowires grown using molecular beam epitaxy on a Si(111) substrate. List of Experimental Equipment and Materials:
DSTMS crystal for THz pulse generation, optical parametric amplifier, quartz substrate for NW transfer.
4：Experimental Procedures and Operational Workflow:
Near-infrared pumping to generate electron-hole plasma, probing with broadband THz pulses.
5：Data Analysis Methods:
Fitting measured THz photoconductivity using the localized surface plasmon (LSP) model.
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