研究目的
Investigating an alternative solution based on InGaAs:Rh for direct operation at 1550 nm wavelength in photoconductive microprobes for THz near-field measurements.
研究成果
The InGaAs:Rh-based microprobe is a very attractive alternative to prior LT-GaAs probes operated in combination with SHG units, showing advantages in terms of SNR and comparable bandwidth. It allows the reduction of optical components and provides increased design flexibility.
研究不足
The cause of the observed oversaturation effect in InGaAs:Rh probes is still unclear and subject to ongoing studies.
1：Experimental Design and Method Selection:
Two kinds of photoconductive microprobe-tips were fabricated, differing only in the choice of semiconductor material: LT-GaAs or InGaAs:Rh. The design includes a glass carrier, a thin semiconductor cantilever, and planar electrodes.
2：Sample Selection and Data Sources:
THz pulses generated by a photoconductive fiber-coupled emitter antenna are recorded with these probes.
3：List of Experimental Equipment and Materials:
Photoconductive fiber-coupled emitter antenna, InGaAs:Rh and LT-GaAs-based probes.
4：Experimental Procedures and Operational Workflow:
THz pulses are recorded in an emitter distance of approximately 10 mm using a classic time-domain pump/probe scheme and optical sampling at 1550 nm.
5：Data Analysis Methods:
Comparison of THz near-field transients and frequency spectra recorded with the InGaAs:Rh and LT-GaAs-based probes.
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