研究目的
To demonstrate a record low threshold current density in a quantum dot microdisk laser operating at room temperature in continuous wave regime without temperature stabilization.
研究成果
The study successfully demonstrates a record low threshold current density of 250 A/cm2 in a quantum dot microdisk laser, attributing this achievement to deep localization of charge carriers in InAs/InGaAs quantum dots, high-quality epitaxial growth, and smooth deep etched sidewalls. This result significantly exceeds previous achievements in the field.
研究不足
The study does not explore the impact of passivation or encapsulation on the microdisk lasers' performance. Additionally, the research is limited to a specific diameter of microdisk lasers (31 μ m).
1：Experimental Design and Method Selection:
The study involves the design and testing of a quantum dot microdisk laser with a focus on achieving a low threshold current density. The methodology includes molecular beam epitaxy for growing the epitaxial structure, photolithography, and plasma chemical etching for forming microdisk resonators.
2：Sample Selection and Data Sources:
The samples are microdisk lasers with a 31-μ m diameter, fabricated from an epitaxial wafer. Data is collected from emission spectra and light-current curves.
3：List of Experimental Equipment and Materials:
Equipment includes a molecular beam epitaxy system, photolithography setup, plasma chemical etching system, and an InGaAs CCD array for light detection.
4：Experimental Procedures and Operational Workflow:
The process involves growing the epitaxial structure, fabricating microdisk resonators, and testing the lasers under DC current injection at room temperature. Light emission is collected and analyzed.
5：Data Analysis Methods:
The analysis includes evaluating the threshold current density from light-current curves and analyzing emission spectra to determine lasing characteristics.
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