研究目的
Investigating the feasibility of using monolithically integrated AlxGa1-xN based emitters and detectors for the study of UVC waveguiding and PICs.
研究成果
The study successfully demonstrated the feasibility of using monolithically integrated AlxGa1-xN based emitters and detectors for UVC waveguiding and PICs. The measured attenuation coefficient for multi-mode UVC propagation in the ridge waveguide structure was approximately 23 cm-1, with 80% of the guided light confined in the Al0.65Ga0.35N layer.
研究不足
The study is limited by the challenges in fabricating cleaved facets in AlN/sapphire structures and the difficulty in characterizing the optical attenuation coefficient due to the thin absorbing AlGaN layers.
1：Experimental Design and Method Selection:
The study involved the fabrication of a UVC photonics integrated circuit (PIC) consisting of monolithically integrated AlxGa1-xN MQWs based light-emitting diodes, detectors and channel waveguides on sapphire substrates. The waveguide stack was designed with a 1.5 μm thick n-Al0.65Ga0.35N waveguide over an AlN (3.5 μm thick) clad layer.
2：5 μm thick n-Al65Ga35N waveguide over an AlN (5 μm thick) clad layer.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The samples were fabricated using MOCVD-grown AlxGa1-xN heterojunctions on sapphire substrates.
3：List of Experimental Equipment and Materials:
The fabrication process involved the use of Inductively Coupled Plasma Reactive Ion Etching (ICPRIE) for device patterning and a Rapid Thermal Annealing (RTA) system for contact annealing.
4：Experimental Procedures and Operational Workflow:
The devices were characterized by measuring the photocurrent as a function of waveguide length and the distribution of guided light among the different layers of the waveguide structure.
5：Data Analysis Methods:
The waveguide losses were estimated by fitting the photocurrent data to an exponential decay model.
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