研究目的
Investigating the mechanism of laser-induced damage in hafnia films produced by an oxygen assisted dual ion beam sputtering process and understanding the role of nanobubbles as precursors to laser-induced damage.
研究成果
The study concludes that nanobubbles with entrapped gases in hafnia films are potent precursors to laser-induced damage under pulsed UV laser exposure. The damage initiation is attributed to laser-induced plasma generation within the nanobubbles through multiphoton ionization. The findings provide a basis for developing mitigation strategies to produce high laser-damage resistant hafnia films.
研究不足
The study is limited to hafnia films produced by the oxygen assisted dual ion beam sputtering method and under pulsed, nanosecond ultraviolet laser exposure. The findings may not be directly applicable to other deposition methods or laser conditions.
1:Experimental Design and Method Selection:
The study combines laser damage testing with advanced analytical techniques for chemical and structural characterization, including Rutherford Backscattering Spectroscopy (RBS), electron energy loss spectroscopy (EELS), small angle X-ray scattering (SAXS), and scanning/transmission electron microscopy (STEM) coupled with high-angle annular dark-field (HAADF).
2:Sample Selection and Data Sources:
Thin films of hafnia single layer of half-wave optical thickness for 355 nm laser light were produced via a dual-beam IBS deposition system, under secondary oxygen ion assist voltages ranging from 0 V to 350 V.
3:List of Experimental Equipment and Materials:
A dual-beam IBS deposition system, Corning 7980 fused silica substrates, and a 355 nm, 8 ns pulsed ultraviolet laser.
4:Experimental Procedures and Operational Workflow:
The laser performance of the hafnia films was investigated using a 1-on-1 damage testing protocol at 50 individual locations with fluences varying from ~1 J/cm2 up to ~6 J/cm
5:Data Analysis Methods:
The data was analyzed using theoretical fitting of the SAXS data and chemical analysis via EELS.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容