研究目的
To study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation.
研究成果
The presence of a built-in electric field at the p-n junction affects the resistance of IR-LEDs to gamma rays irradiation, with a higher rate of defects introduction in the space charge region than in the neutral region. Shortening the LED pins during storage can improve their resistance to gamma rays irradiation.
研究不足
The study is limited to the effects of gamma rays on AlGaAs heterostructure IR-LEDs and does not explore other types of ionizing radiation or semiconductor materials. The findings are based on the specific conditions of the experiment, and further research is needed to generalize the results.
