研究目的
Investigating the nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale resolution to understand the effects of NO- and N2-annealing on the SiO2/SiC interface.
研究成果
NO-POA leads to preferential nitridation at the SiO2/SiC interface initially, with longer durations causing nitrogen distribution in the bulk SiO2. N2-POA induces both interface and surface nitridation. Excessive NO-POA may degrade device performance due to defect generation.
研究不足
The technique's depth-resolution is limited to sub-nanometer scale, and the study focuses on NO- and N2-annealed samples, potentially not covering all annealing conditions.
1：Experimental Design and Method Selection:
XPS-based technique was used to characterize the nitrided SiO2/SiC interface with sub-nanometer-scale resolution.
2：Sample Selection and Data Sources:
Two sets of samples were prepared: one set underwent NO-POA at 1250°C for varying durations, and the other set underwent N2-POA at 1450°C for 60 min.
3：List of Experimental Equipment and Materials:
XPS with a 100-μm-diameter monochromatic Al Kα line, atomic force microscope (AFM), HF solution for SiO2 thinning.
4：Experimental Procedures and Operational Workflow:
SiO2 layers were thinned to ~5 nm, and slope-shaped SiO2/SiC structures were prepared by partial dipping into HF. XPS measurements were taken at various SiO2 thicknesses.
5：Data Analysis Methods:
Si 2p and N 1s core-level spectra were analyzed to determine nitrogen distribution.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
