研究目的
Investigating a novel method for planarizing a thick, low-κ film based on multiple-spins of layers of hydrogen silsesquioxane without a need for thermal curing for electronic-photonic integrated circuits.
研究成果
The novel HSQ planarization method is promising for fabricating low-κ structures in electronic-photonic integrated circuits, offering simple fabrication steps without the need for thermal curing or etch-back processing. A coplanar waveguide with a characteristic impedance of 48–56 Ω over a wide frequency range was successfully demonstrated.
研究不足
The method's applicability may be limited by the specific requirements of the fabrication process and the materials used, such as the need for electron-beam lithography and the specific properties of HSQ.
1：Experimental Design and Method Selection:
The study employed a novel HSQ planarization method based on multiple spin coating and electron-beam exposure without the need for thermal curing.
2：Sample Selection and Data Sources:
Films of total thicknesses of 5 and 6 μm were planarized on a heavily doped InP substrate.
3：List of Experimental Equipment and Materials:
Hydrogen silsesquioxane (HSQ), InP substrate, electron-beam lithography (EBL), plasma-enhanced chemical vapor deposition (PECVD) for SiO2 deposition.
4：Experimental Procedures and Operational Workflow:
The HSQ film was created using a multiple spin process, with each spin followed by postapplication baking, electron-beam exposure, and development.
5：Data Analysis Methods:
The performance of the coplanar waveguide was tested using a Vector Network Analyzer and analyzed for characteristic impedance and insertion loss.
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