研究目的
Investigating the improvements for fully filled TSVs by optimizing sputtering and electroplating conditions to enhance the quality of TSVs in high-density integrated circuit packaging.
研究成果
Optimized sputtering and electroplating conditions significantly improve the quality of TSV filling. The mechanism of improvement is attributed to the interface effect of the TSV structure, with lower current densities and longer electroplating times preventing the pinch-off phenomenon and ensuring void-free filling.
研究不足
The study focuses on the optimization of sputtering and electroplating conditions for TSVs but does not explore the scalability of these methods for industrial applications or the long-term reliability of the TSVs under operational conditions.
1：Experimental Design and Method Selection:
Different sputtering approaches of the seed layers were employed to prepare the TSV samples, accompanied by the adjustment of various electroplating profiles. X-ray and SEM images were observed to characterize the structures of the samples.
2：Sample Selection and Data Sources:
Four-inch silicon wafers with high resistivity of 4000 ??cm were used to fabricate vias with aspect ratios of 1:1 and 1:4 by the Bosch etching method.
3：List of Experimental Equipment and Materials:
Magnetic controlled sputtering equipment, X-ray equipment, scanning electron microscope (SEM), ICP-CVD equipment, and electroplating solution.
4：Experimental Procedures and Operational Workflow:
The process involved sputtering seed layers, pretreatment before electroplating, electroplating with adjusted current densities, and characterization of the samples.
5：Data Analysis Methods:
The quality of TSV filling was analyzed based on X-ray and SEM images to evaluate the effectiveness of the optimized sputtering and electroplating conditions.
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