研究目的
Investigating the controlled growth of vertically aligned WS2 with high-temperature stability through the thermolysis of solid precursor K2WS4.
研究成果
The study successfully demonstrated the controlled growth of vertically aligned WS2 layers with high-temperature stability through the thermolysis of K2WS4. Potassium element in the precursor plays a critical role in the growth and evolution of vertically aligned WS2. The method is also applicable to the growth of vertically aligned MoS2, providing a pathway for the design of materials with optimized structures for superior properties.
研究不足
The study focuses on the growth mechanism and high-temperature stability of vertically aligned WS2 layers, with limited discussion on their application performance in devices.