研究目的
To experimentally demonstrate a two-mode multiplexer in the multi-layer Si-SiN platform for the 2μm waveband, aiming to overcome the 'capacity trench' in future communications and sensing by extending from the O/C band to the 2μm waveband.
研究成果
A two-mode multiplexer was experimentally demonstrated in a multilayer Si-SiN platform with low insertion loss and wideband operation, suitable for future integrated communications systems.
研究不足
The study is limited to the 2μm waveband and focuses on the multilayer Si-SiN platform, with potential areas for optimization in device design for lower insertion loss and crosstalk.
1：Experimental Design and Method Selection:
The device is designed in an SOI wafer with a 220 nm top silicon wafer and 2 μm Box layer, employing adiabatic taper structures for mode transition.
2：Sample Selection and Data Sources:
The gap between the Si and SiN is set to 300 nm, and the thickness of the SiN layer is 400nm.
3：List of Experimental Equipment and Materials:
SOI wafer, SiN layer, tunable laser source at 2 μm waveband, lensed fiber, inverter taper, photo detector.
4：Experimental Procedures and Operational Workflow:
The devices were fabricated in a CMOS Fab, and measurements were conducted using a tunable laser source sweeping from 1945 nm to 1985 nm.
5：Data Analysis Methods:
The output of the waveguide was collected and analyzed for insertion loss and crosstalk.
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