研究目的
Investigating the zonal response of different Silicon Photomultipliers (SiPMs) by scanning with a micron laser spot to determine the geometrical fill factor of deep microwell SiPMs when detecting red light.
研究成果
The method of scanning silicon photomultipliers using a micron laser beam demonstrated good agreement between the measured and calculated values of the geometrical fill factor for the surface-pixel photodiode. For the deep SiPM, the geometrical factor was found to be less than 100%, suggesting that not all photoelectrons are collected in the region of avalanche multiplication. This could be improved by adjusting the structure of the SiPM.
研究不足
The study was limited by the size of the laser spot and the step size during scanning, which affected the spatial resolution. The focusing on pixels situated in the depth of the semiconductor layer was challenging and required a specific method.
1：Experimental Design and Method Selection:
The study involved scanning SiPMs with a micron laser beam to investigate their zonal response. The technique included focusing a laser spot on the SiPM surface and moving it across the surface to measure the response.
2：Sample Selection and Data Sources:
Two types of SiPMs were studied: the MAPD-2 surface-pixel photodiode and the MAPD-3N deep SiPM.
3：List of Experimental Equipment and Materials:
A laser operating at a wavelength of 662 nm, a focusing system of lenses, a Positioning System for 3D movement, a DRS4 analog-to-digital converter, a Pre-Amplifier, and a Keithley 6487/E picoammeter were used.
4：Experimental Procedures and Operational Workflow:
The laser was focused on the SiPM surface, and the spot was moved across the surface to measure the response. The signal from the photodiode was amplified and digitized for analysis.
5：Data Analysis Methods:
The data were analyzed by integrating the signal in a time window and collecting the values in a histogram. The average number of photoelectrons at every point was estimated using Poisson distribution.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
