研究目的
To determine the degradation and activation energy of space GaInP/Ga(In)As/Ge triple junction solar cells through an innovative temperature Accelerated Life Test (ALT).
研究成果
The developed innovative temperature ALT allows to have solar cells at different temperatures in a unique climatic chamber, reducing cost and time. The degradation is a consequence of the current injection working at high temperature, and there is a lineal tendency between the dark power degradation at nominal current in ALT and the maximum power illumination degradation at 25 oC. An activation energy Ea = 0.97 eV is achieved for a 5% of maximum power degradation.
研究不足
The upper thermal silicon layer is the weakest part of the assembly, and the dispersion in the degradation as deduced from illumination measurements for the high temperature set of samples is significant.
1：Experimental Design and Method Selection:
The ALT emulates the thermal stress space solar cells endure, using a climatic chamber under nitrogen atmosphere at three different temperatures.
2：Sample Selection and Data Sources:
20 TJ Solar Cell Assembly 3G30A from AZUR, InGaP/Ga(In)As/Ge triple junction solar cells were used.
3：List of Experimental Equipment and Materials:
Climatic chamber, heater resistances (TJ250 from TE Connectivity?), Agilent 6631B System DC power supply, Keithley 3706A High Performance DMM/Switch System, LabVIEW based homemade software for virtual instrumentation.
4：Experimental Procedures and Operational Workflow:
Solar cells were subjected to current injection and periodic dark I-V measurements at different temperatures inside the climatic chamber.
5：Data Analysis Methods:
Results were fitted to a temperature Arrhenius model to obtain the activation energy and acceleration factor.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
