研究目的
Investigating an alternative approach to understanding the characteristics of voltage dependent reduction of Schottky Barrier Height (SBH) in two-dimensional MSM photodetectors.
研究成果
The proposed exponential relationship between SBH reduction and bias voltage provides a straightforward approach to determine the characteristics of MSM devices, offering meaningful insights on the non-ideality of SBH. The model fits accurately for existing TMD-based two-dimensional MSM devices and is expected to be applicable for future devices as well.
研究不足
The model assumes SBH as a constant over the entire range of metal semiconductor contact for a particular intensity of incident light, which may not account for spatial inhomogeneity in Schottky junctions. Further research is needed to quantify the dependence of fitting parameters a and b on temperature and device dimensions.
1：Experimental Design and Method Selection:
The study proposes an exponential relationship between the reduction of SBH and bias voltage to understand the non-ideality of Schottky junctions. This relationship is applied directly into the Richardson-Dushman equation to estimate photocurrents of different TMD-based devices analytically.
2：Sample Selection and Data Sources:
The model is tested on four different TMD-based photodetectors under illumination as reported in literature.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The I-V characteristics of the photodetectors are calculated using the proposed model and compared with experimental values.
5：Data Analysis Methods:
The mean absolute error between the calculated and experimental results is analyzed to validate the model.
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