研究目的
To calculate the electroluminescence spectrum and radiative recombination rate of short channel single-walled carbon nanotube field effect transistor in the presence of a transverse magnetic field using the non-equilibrium Green’s function method.
研究成果
The study concludes that the application of an external transverse magnetic field to a SWNTFET can significantly enhance the radiative recombination rate and cause a red shift in the electroluminescence spectrum. This tuning of the electroluminescence spectrum by the magnetic field can be utilized in next-generation optoelectronic and photonic devices.
研究不足
The study is limited to the simulation of a specific type of SWNTFET under certain conditions. The practical implementation and scalability of the findings to other types of nanotubes or under different conditions are not explored.
1：Experimental Design and Method Selection:
The study uses the non-equilibrium Green’s function (NEGF) method to calculate the electroluminescence spectrum and radiative recombination rate. The effect of external magnetic field and nanotube diameter on the device's performance is explored.
2：Sample Selection and Data Sources:
A MOSFET-like coaxial gated SWNTFET with PIN structure is considered for simulation. The device is simulated at 300 K.
3：List of Experimental Equipment and Materials:
The HfO2 was used as an oxide layer of thickness 3 nm and dielectric constant
4：Experimental Procedures and Operational Workflow:
The Poisson’s equation followed by Schrodinger’s equation is solved self-consistently. The density of charge carriers is determined by solving for the electron and hole correlation functions.
5：Data Analysis Methods:
The radiative recombination rate is calculated by integrating the electron and hole correlation functions over the entire energy range.
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