研究目的
Investigating the regular and irregular performance variation of module string and occurred conditions for potential induced degradation-affected crystalline silicon photovoltaic power plants.
研究成果
The study concludes that negative potential and stacking faults are necessary and sufficient conditions for PID occurrence in crystalline silicon photovoltaic modules. It highlights the irregular and regular degradation patterns in monocrystalline silicon modules and the absence of regular patterns in multicrystalline silicon modules, attributing these findings to the preparation processes of the modules.
研究不足
The study acknowledges the complexity of PID phenomena and the difficulty in calculating power degradation as a function of various factors due to the complication of stacking faults.
1：Experimental Design and Method Selection:
The study investigated PID in crystalline silicon photovoltaic power plants across various climate conditions, focusing on two types of solar modules.
2：Sample Selection and Data Sources:
The study involved photovoltaic power plants with monocrystalline and multicrystalline silicon solar modules, covering various front glass, EVA, and backsheet types.
3：List of Experimental Equipment and Materials:
Equipment included portable XJTU-10A for current-voltage characteristics, Fluke 15B+ for voltage measurements, T420 for thermography images, YFJ-10 solar irradiation meter, and PASAN Sunsim 3C solar simulator.
4：Experimental Procedures and Operational Workflow:
The study measured electrical performance under field conditions and standard test conditions, including electroluminescence and thermography imaging.
5：Data Analysis Methods:
Analyzed the relationship between module performance degradation and environmental factors, potential distribution, and stacking faults.
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