研究目的
To demonstrate an Indium Tin Oxide (ITO) Mach-Zehnder interferometer heterogeneously integrated in silicon photonics for efficient modulation and beam steering applications.
研究成果
The demonstrated ITO-based MZI modulator with a lateral MOS configuration achieves efficient modulation (VπL = 63 V?μm) and serves as a building block for an optical phased array beam steering platform. This approach has the potential to reduce loss in current OPA design and avail of the ITO GHz-fast modulation speed for next-generation LiDAR systems, holographic display, free-space optical communications, and optical switches.
研究不足
The study is limited by the fabrication imperfections such as sidewall roughness, surface defects, and alignment issues which inherently deter achieving perfectly symmetrical MZI structures. Additionally, the tradeoff between obtaining π-phase shift with competing effects in increasing device lengths or bias voltages is a technical constraint.
1：Experimental Design and Method Selection:
A symmetrical passive MZI structure on a Silicon on insulator (SOI) platform was chosen to distinguish modulation effects from the active device. The phase shifter section was realized in a novel lateral MOS configuration for efficient modulation.
2：Sample Selection and Data Sources:
ITO material parameters were derived by a combination of electrical and ellipsometric spectroscopic measurements.
3：List of Experimental Equipment and Materials:
Raith VOYAGER tool for EBL, CHA Criterion e-beam evaporation system, Fiji G2 ALD tool, Filmetrics F20-UV system, and MF319 solution for wet etch process.
4：Experimental Procedures and Operational Workflow:
Fabrication involved EBL patterning, ALD for Al2O3 deposition, ITO deposition using IBD, selective etching of Al2O3, and Au deposition for contacts and plasmonic top layer.
5：Data Analysis Methods:
FEM simulations were carried out to resolve the electrostatic field overlap with the active ITO, and experimental data was analyzed to extract modulation performance.
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