研究目的
Investigating the use of high-voltage silicon carbide (SiC) devices in solid-state transformers to meet the demands of a smarter electrical grid.
研究成果
The research demonstrates the feasibility of using MV SiC devices in solid-state transformers for smart grid applications, highlighting the need for novel magnetic materials and design approaches. Despite the challenges, the study paves the way for the wider adoption of MV SiC devices in real field operations.
研究不足
The high cost of MV SiC devices and their susceptibility to faults and reliability issues compared to conventional transformers are significant limitations. Additionally, the design of converters requires careful consideration to account for high blocking voltage and the high rate of change of voltage across the semiconductor device.
1：Experimental Design and Method Selection:
The study involves the development of solid-state transformers using 15-kV SiC IGBTs and 10-kV SiC MOSFETs to validate the viability of MV solid-state transformers.
2：Sample Selection and Data Sources:
The research utilizes MV SiC-based power semiconductor devices from companies like Wolfspeed, General Electric, Infineon Technologies, Mitsubishi, and ROHM.
3：List of Experimental Equipment and Materials:
Includes 15-kV SiC IGBTs, 10-kV SiC MOSFETs, and high-frequency transformers.
4：Experimental Procedures and Operational Workflow:
The TIPS project demonstrated MV SST using SiC devices, focusing on MV ac–dc conversion, MV dc-LV dc conversion, and LV ac–dc conversion.
5：Data Analysis Methods:
The study evaluates the performance of SiC-based converter systems compared to Si-based systems, focusing on efficiency, switching frequency, and reliability.
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