研究目的
Investigating the structural modifications of polycrystalline Si (pc-Si) wafers fabricated from silicon powder through laser treatments and nanowire etching for low-cost photovoltaics.
研究成果
Laser treatments can modify the structure of pc-Si wafers for photovoltaic applications, enabling grain size enlargement and nanowire formation under specific conditions. However, crack formation and etching limitations need to be addressed.
研究不足
Crack formation during laser recrystallization and the inability to form nanowires on as-cut wafers without polishing or in regions subjected to high-power laser treatments.
1：Experimental Design and Method Selection:
Laser treatments were applied to pc-Si wafers to study structural modifications. Metal-assisted wet chemical etching (MAWCE) was used for nanowire fabrication.
2：Sample Selection and Data Sources:
pc-Si wafers fabricated by wire sawing of hot-pressed ingots sintered from Si powder were used.
3：List of Experimental Equipment and Materials:
Diode laser (808 nm), e-beam evaporation system, AgNO3, HF, H2O2 for MAWCE.
4：Experimental Procedures and Operational Workflow:
Laser irradiation was performed on as-cut wafers and those with deposited a-Si layers. MAWCE was applied to form nanowires.
5：Data Analysis Methods:
SEM and EBSD were used for structural analysis.
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