研究目的
Investigating the feasibility of developing metallic and plasmonic ultrathin TiN films with a PE-ALD deposition and post-deposition treatment that is substrate insensitive and with a low temperature of 250 °C.
研究成果
The work demonstrates a low-temperature PE-ALD deposition and post-deposition treatment of ultrathin plasmonic TiN that is substrate insensitive. The post-deposition hydrogen plasma treatment improves the metallic properties of the ultrathin films and tunes their plasmonic properties, making them behave just as metallic as thicker samples.
研究不足
The oxygen content in the TiN film is attributed to the impurity in the precursor TDMATi and the relatively high base pressure of 100 mTorr present in the benchtop ALD system. The oxygen content is sufficiently low but not negligible.
1:Experimental Design and Method Selection:
PE-ALD method with a processing temperature less than 250 °C, using TDMATi and NH3 plasma precursors.
2:Sample Selection and Data Sources:
TiN thin films grown directly onto MgO and Si <100> substrates.
3:List of Experimental Equipment and Materials:
Gemstar XT plasma enhanced atomic layer deposition system, Argon as a carrier and purging gas, Tetrakis (dimethylamido) titanium(IV) (TDMATi) as the titanium precursor, NH3:Ar plasma.
4:Experimental Procedures and Operational Workflow:
Exposure of TDMATi to the chamber for 1000 milliseconds, followed by a 10 s purge under 110 sccm argon, then exposure to 300 W NH3:Ar plasma for 20 s, followed by a 10 s purge under 110 sccm argon. This cycle is repeated until the desired thickness is reached.
5:Data Analysis Methods:
Structural characterization by Raman spectroscopy and XPS, optical constants characterization by spectroscopic ellipsometry.
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