研究目的
Investigating the enhancement of ultraviolet photodetector performance by inserting a dome shape microstructure of silica and zinc oxide (SZO) in n-ZnO nanorods/p-Si heterojunction.
研究成果
The insertion of a dome-shaped SZO intermediate layer between n-ZnO nanorods and p-Si substrate significantly enhances the UV photodetector performance by acting as an antire?ection layer and improving the crystal quality of ZnONRs arrays. The optimal deposition temperature for the SZO layer is found to be 200 (cid:1)C.
研究不足
The study focuses on the optimization of the deposition temperature for the SZO layer and its effect on the photodetector performance. Other factors such as the thickness of the SZO layer and the concentration of the hydrothermal solution were not varied.
1：Experimental Design and Method Selection:
A mixed intermediate layer of silica and zinc oxide (SZO) with architecturally dome-shaped microstructure is fabricated by combining a hydrothermal method and a plasma-enhanced chemical vapor deposition technique.
2：Sample Selection and Data Sources:
A periodically striped pattern (ridge: trench ? 4 mm: 4 mm) was prepared on a (100) p-type Si substrate.
3：List of Experimental Equipment and Materials:
SEM for surface morphology, UVeVis measurement system for re?ection spectra, Keithley 4200-MS Tech for IeV characteristics.
4：Experimental Procedures and Operational Workflow:
Fabrication of SZO layer at 200 (cid:1)C, hydrothermal growth of n-type ZnONRs arrays, measurement of photoelectric properties.
5：Data Analysis Methods:
Analysis of SEM images, re?ectance spectra, and IeV characteristics to evaluate the performance of the photodetector.
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