研究目的
Investigating the operation speed and performance of a Si photonic crystal modulator with meander line electrodes and termination resistors for high-speed optical interconnects.
研究成果
The 64 Gbps operation in a compact Si photonic crystal modulator with phase shifters as short as 200 μm was demonstrated, contributing to the development of CMOS-compatible modulators of compact size, low voltage, low power consumption, wide working spectrum, and a temperature tolerance toward 400 Gbps optical interconnects.
研究不足
The study has room for optimization of the geometry and impedance of the electrodes as well as the drive signal quality. The total device size, including the footprint of the electrodes, could be reduced further.
1：Experimental Design and Method Selection:
The study employed a Si photonic crystal waveguide (PCW) and lattice-shifted PCW (LSPCW) slow light modulators with a short phase shifter length and a wide working spectrum. The phase mismatch between slow light and RF signals was compensated for by meander line electrodes and termination resistors.
2：Sample Selection and Data Sources:
Devices were fabricated by CMOS process using KrF excimer laser exposure and phase shift masks on 200-mm silicon-on-insulator.
3：List of Experimental Equipment and Materials:
Included a 2:1 multiplexer (MUX, SHF 601 A), PPG (Anritsu MP-1800A), SHF 810 amplifier, and SHF EQ25 A-3 dB equalizer.
4：Experimental Procedures and Operational Workflow:
The frequency response was investigated for different termination resistors and delay line lengths. Modulation experiments were conducted at 50, 56, and 64 Gbps.
5：Data Analysis Methods:
The cutoff frequency f3dB was measured for different termination resistors and delay line lengths to evaluate the phase matching effect.
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