研究目的
Investigating the performance of InGaN-based red LEDs grown on (201) β-Ga2O3 substrates with AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures.
研究成果
InGaN-based LEDs on (201) β-Ga2O3 substrates in the red spectral range were demonstrated. The LEDs showed temperature stability of the EL emission, which had the characteristic temperature of 222 K at 100 mA and the peak-shift wavelength of 0.085 nm K?1.
研究不足
The forward voltage remains high compared to AlInGaP-based LEDs because the AlN and AlGaN barriers work as significant potential barriers. The characteristic temperature of the LEDs was lower than that reported for AlInGaP-based LEDs, indicating that InGaN-based red QWs dominate the non-radiative recombination process by QCSE and defects.
1：Experimental Design and Method Selection:
The LED structures were grown by metalorganic vapor phase epitaxy (MOVPE) in a single-wafer horizontal reactor. A hybrid multiple-quantum-well (MQWs) structure and a strain-compensating barrier structure were used for enhancing the light output power.
2：Sample Selection and Data Sources:
A 5 μm thick Si-doped n-GaN template grown on a Sn-doped (201) β-Ga2O3 substrate by MOVPE was used.
3：List of Experimental Equipment and Materials:
SiNx arrays were performed to improve light extraction efficiency. The geometry of SiNx mask patterns is 2 μm diameter, 4 μm pitch, and 1 μm height.
4：Experimental Procedures and Operational Workflow:
The LED devices were fabricated in the standard face-up configuration. A 90 nm thick indium tin oxide layer was deposited on top of the p-layer as an ohmic contact by e-beam evaporation. The n-GaN layer was exposed by inductively coupled plasma etching to fabricate an n-contact electrode as a mesa-structure.
5：Data Analysis Methods:
The LED devices were characterized by electroluminescence (EL) measurement under direct current (DC) operation at room temperature (RT). The output power of the bare LEDs was measured in a calibrated integrating sphere.
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