研究目的
Investigating the effect of Ag content in wide-gap AgwCu1-wIn1-xGaxSe2 (ACIGS) absorber films on solar cell performance and the impact of different buffer materials on the heterojunction quality.
研究成果
The study highlights the potential of Ag alloying in combination with alternative buffer layers to improve the performance of wide-gap chalcopyrite solar cells. A sufficient Ag alloying level can avoid detrimental negative CBO with a CdS buffer, leading to higher VOC values. However, residual interface recombination remains a limiting factor for performance.
研究不足
The study is limited by residual interface recombination in solar cells with optimized CBO, which still affects performance. Additionally, the formation of OVCs at high Ag and Ga contents may impact the electro-optical properties of the devices.
1：Experimental Design and Method Selection:
The study involves first-principles calculations to predict trends in absorber band gap energy and band structure. Solar cells were processed with different Ag/I ratios and GGI ratios, using a three-stage co-evaporation process for the ACIGS absorber.
2：Sample Selection and Data Sources:
Six different deposition runs were conducted with varying Ag/I and GGI ratios. The samples were characterized using GDOES, XRF, SEM, STEM-EDS, EQE, and IV analysis.
3：List of Experimental Equipment and Materials:
Equipment includes a Spectrma Analytik GDA 750 HR system for GDOES, a Spectro X-Lab 2000 instrument for XRF, a Zeiss Merlin SEM, a FEI Titan Themis XFEG STEM, and a Perkin Elmer Lambda 900 spectrometer for reflectance and transmission measurements. Materials include ACIGS absorber films, CdS and ZTO buffer layers, and i-ZnO/ZnO:Al window layers.
4：Experimental Procedures and Operational Workflow:
The ACIGS absorber was co-evaporated via a three-stage process. Half of each absorber film was coated with CdS and the other half with ZTO. Solar cells were finalized by sputtering an i-ZnO/ZnO:Al window layer stack.
5：Data Analysis Methods:
Data were analyzed using first-principles calculations within DFT, with electronic properties calculated using the HSE06 exchange-correlation functional.
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