摘要： In this paper, the influence of bordering effects on solar cells parameters is investigated through a three-dimensional model, which these effects are ignored in one dimensional model cases. They are incorporated in two and three-dimensional models by an additional recombination term in the drift-diffusion equations. The additional recombination term is calculated via the Schockley-Red-Hall theory. The model includes also radiative recombination process and neglects auger recombination (considered only in heavily doped p-n junctions). This model is based on the solution of Poisson’s equation and continuity equations of electrons and holes. At metallic contacts, Dirichlet-type boundary conditions are applied, while Neumann-type boundary conditions are used in other interfaces of the device. This modified model was tested on a simple Silicon p-n junction to show the contribution of the bordering effects in the carrier and currents densities.