研究目的
To investigate the properties of boron-doped hydrogenated silicon films as a thermo-sensing layer for uncooled microbolometers, focusing on their electrical, structural, and chemical properties.
研究成果
Boron-doped hydrogenated silicon films with mixed-phase structure exhibit appropriate values of TCR and Rsheet for thermo-sensing layers in uncooled microbolometers. The 1/f noise is reduced in mixed-phase films compared to amorphous films, making them suitable candidates for such applications.
研究不足
The study focuses on the effects of plasma parameters on film properties but does not explore the integration of these films into actual microbolometer devices. The trade-off between TCR and Rsheet, as well as the reduction of 1/f noise in mixed-phase films, suggests potential areas for further optimization.
1：Experimental Design and Method Selection:
Boron-doped hydrogenated silicon (BSi:H) films were deposited by RF-PECVD on Corning Eagle XG glass substrates. The films' properties were studied by varying plasma parameters such as power density, B2H6/SiH4 ratio, and H2/SiH4 ratio.
2：Sample Selection and Data Sources:
Films of about 100 ± 10 nm thickness were deposited. Electrical measurements were performed using Al coplanar electrodes.
3：List of Experimental Equipment and Materials:
RF-PECVD system, Corning Eagle XG glass substrates, Al electrodes, Keithley 617 electrometer, Agilent 89410A vector signal analyzer, IR Prestige-21 spectrometer.
4：Experimental Procedures and Operational Workflow:
Films were characterized by Raman spectroscopy for crystallinity, FTIR spectroscopy for chemical bonds, and electrical measurements for TCR, Rsheet, and 1/f noise.
5：Data Analysis Methods:
Crystalline volume fraction was calculated from Raman spectra, hydrogen content from FTIR spectra, and TCR from temperature-dependent dark conductivity.
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