研究目的
Investigating the integration of a field-assisted superlinear threshold selector with resistive random access memory (RRAM) to overcome the sneak current challenge in cross-point RRAM arrays.
研究成果
The FAST selector demonstrates excellent performance metrics, including high selectivity, sharp turn-ON slope, and high endurance, making it suitable for high-density RRAM integration. The 1S1R integration successfully overcomes the sneak current challenge, offering a promising solution for future memory applications.
研究不足
The study demonstrates the potential of FAST selectors for high-density RRAM applications but may require further optimization for scalability beyond 4 Mb arrays and for operation under varying environmental conditions.
1：Experimental Design and Method Selection:
The study focuses on the integration of a field-assisted superlinear threshold (FAST) selector with RRAM to mitigate sneak currents in cross-point arrays. The FAST selector's performance metrics, including selectivity, switching slope, threshold voltage tunability, and endurance, are evaluated.
2：Sample Selection and Data Sources:
The devices were fabricated using a 130-nm CMOS technology without any modification of standard process equipment.
3：List of Experimental Equipment and Materials:
The study utilizes amorphous silicon-based electrochemical metallization (ECM) RRAM and a FAST selector with an amorphous oxide SLT medium.
4：Experimental Procedures and Operational Workflow:
The electrical characteristics of the FAST selector and its integration with RRAM in 1S1R and 1R1S configurations are measured, including cycling endurance, subthreshold leakage current, and memory ON/OFF ratio.
5：Data Analysis Methods:
The electrical properties are analyzed to evaluate the selector's performance and its integration with RRAM for high-density memory applications.
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