研究目的
Investigating the effect of the voltage rise rate of a slowly-rising driver on the EO Q-switched laser outputs.
研究成果
The optimum slowly-rising driver for any EO Q-switched laser requires that the voltage be near the dynamic quarter-wave voltage during the emission of Q-switched laser pulses. The dynamic quarter-wave voltage of LN crystals is confirmed to be 1.5 – 1.7 times the static one, and the optimal range of lasing voltage is determined to be 0.88 – 1.12 times the dynamic quarter-wave voltage.
研究不足
The study focuses on the effect of slowly-rising HV pulses on Q-switched laser outputs but does not explore the impact of other factors such as temperature variations or different types of gain media.
1:Experimental Design and Method Selection:
The experiment was conducted in a flash pumped Nd:YAG laser with variable cavity lengths and LiNbO3 Q-switches of various dimensions. The dependence of Q-switched laser outputs on the rise rate of slowly-rising HV pulses was investigated.
2:Sample Selection and Data Sources:
Three commercially available LN Pockels cells (PC) were used, labeled as LN1, LN2, and LN3, with different dimensions.
3:List of Experimental Equipment and Materials:
A Nd:YAG crystal, Xe-lamp, high voltage probe, digital oscilloscope, InGaAs photodetector, and laser energy meter were used.
4:Experimental Procedures and Operational Workflow:
The slowly-rising voltage waveforms were measured, and the temporal behavior of the HV pulses and laser pulses was recorded synchronously. The output energy was measured for different cavity lengths and voltage rise rates.
5:Data Analysis Methods:
The relationship between output energy and lasing voltage was analyzed, and the optimum voltage rise rates and lasing voltages were determined.
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