研究目的
Investigating the formation of silicon p–n-diode based electro-optic modulators using local oxidation technology to improve design parameter reproducibility and surface smoothness.
研究成果
Local oxidation technology effectively forms silicon electro-optic modulators with reproducible design parameters, low surface roughness, and high breakdown voltage, offering advantages over PCE for certain applications.
研究不足
The study focuses on the formation and structural parameters of modulators, with optical performance indicated but not extensively analyzed. The comparison with PCE highlights advantages but may not cover all potential drawbacks of local oxidation.
1：Experimental Design and Method Selection:
The study uses local silicon oxidation to form rib waveguides, comparing it with plasma-chemical etching (PCE).
2：Sample Selection and Data Sources:
SOI wafers with a cut-off silicon layer thickness of 500 nm and a buried dielectric thickness of 2 μm are used.
3：List of Experimental Equipment and Materials:
AFM and SEM for structural parameter control, TCAD Sentarius for impurity distribution simulation.
4：Experimental Procedures and Operational Workflow:
Formation of rib waveguides by local oxidation and PCE, followed by thermal oxidation for PCE samples.
5：Data Analysis Methods:
AFM and SEM for structural parameter measurement, optical parameter control at 1555.7 nm wavelength.
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