研究目的
Investigating the microfabrication of silicon carbide on insulator using direct UV laser ablation for MEMS devices.
研究成果
The direct laser ablation technique enables rapid prototyping of SiC-based MEMS devices, offering a cost-effective and time-saving alternative to traditional fabrication methods.
研究不足
The technique may have limitations in achieving the same precision as conventional lithography and etching processes for very fine features.
1:Experimental Design and Method Selection:
Direct laser ablation technique was employed to replace conventional lithography and etching processes.
2:Sample Selection and Data Sources:
3C-SiC-on-glass wafers were used.
3:List of Experimental Equipment and Materials:
Diode-pumped solid state (DPSS) SamuraiTM laser (355 nm wavelength), shadow mask for nickel deposition.
4:Experimental Procedures and Operational Workflow:
Laser scribing was performed at an average power of 2 Watt, with a scanning speed of 200 mm/s.
5:Data Analysis Methods:
Resistance and temperature measurements were conducted using digital multimeters and infrared cameras.
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