研究目的
Investigating the photodiode bias modulation technology using a uni-traveling-carrier photodiode structure to achieve high modulation bandwidth at specific incident optical power levels.
研究成果
The PD bias modulation technology can achieve detection and modulation simultaneously with a PD at the base station, improving the flexibility of the system. The modulation bandwidth of a UTC-PD can reach 25 GHz at a 150 GHz subcarrier signal when the incident optical power is 12.93 dBm.
研究不足
The main factor affecting the modulation bandwidth is the increase in the fundamental frequency signal power with the increase in the frequency of the bias modulation signal. The modulation bandwidth is also related to the incident light power.
1：Experimental Design and Method Selection:
The study involves theoretical analysis and numerical simulation using Silvaco TCAD and Matlab simulation tools to model the PD bias modulation scheme using UTC-PD.
2：Sample Selection and Data Sources:
The device structure used in the simulation is based on a UTC-PD.
3：List of Experimental Equipment and Materials:
Silvaco TCAD and Matlab simulation tools are used.
4：Experimental Procedures and Operational Workflow:
The output current formula of a UTC-PD using bias modulation technology is determined, and simulations are conducted to verify the feasibility of PD bias modulation.
5：Data Analysis Methods:
The output current variations with subcarrier frequency and bias voltage are analyzed, and the modulation bandwidth is predicted based on simulation results.
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