研究目的
Design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μ m with a long wavelength limit of sensitivity at 0.5 to approximately 9.5 μ m.
研究成果
An optimal design has been developed and MPSEs have been manufactured with a format of 384 × 288 elements with a step of 25 μ m with a long wavelength sensitivity limit of 0.5 to approximately 9.5 μ m. The use of mesa-etching to separate individual photodiodes reduces the photoelectric coupling and provides a high spatial resolution of the matrix PD. The PD developed is distinguished among the existing analogues by a high maximum frame frequency (680 Hz), which allows the use of microscanning systems in thermal imaging channels to improve the parameters.
研究不足
The study acknowledges that obtaining completely defect-free PDs via the technologies for growing CMT is not currently possible. The problem of eliminating defective pixels is solved using different methods, including microscanning.
1:Experimental Design and Method Selection:
The study involved the design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μ m. The circuit and topology were developed for matrix high-speed multiplexers.
2:Sample Selection and Data Sources:
CdxHg1 – xTe/CdTe/ZnTe/GaAs (013) heteroepitaxial structures with a diameter of
3:8 mm for the spectral range of 8–10 μ m were grown by molecular beam epitaxy. List of Experimental Equipment and Materials:
The study used a gas-powered Stirling machine with a linear actuator of the MSMG-
4:5V-5/80 KVO.000K type. Experimental Procedures and Operational Workflow:
The basic technology of manufacturing photosensitive elements included annealing of heteroepitaxial structures of CMT at 220°C, applying a passivating dielectric, opening windows in the dielectric, forming n–p-transitions by implantation of B+ ions, and the deposition of indium columns.
5:Data Analysis Methods:
The study analyzed the differential resistance of the diode of the MPSE and the long-wavelength limit of sensitivity of the photodiodes.
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