研究目的
Investigating the curvature effect-induced electric field crowding in SOI lateral power devices and proposing a 3-D analytical model to understand and optimize the device performance.
研究成果
The proposed 3-D analytical model effectively describes the curvature effect-induced electric field crowding in SOI LDMOS devices. It provides a physical insight into the curvature effect and offers a structure optimization criterion for device design. The model's predictions align well with TCAD simulations, validating its accuracy and usefulness in optimizing device parameters.
研究不足
The study is limited to SOI lateral power devices with multifinger or circular layouts. The model's accuracy depends on the approximations made in simplifying the 3-D Poisson equation.
1：Experimental Design and Method Selection:
The study employs a novel 3-D analytical model to explore the curvature effects in small radius regions by solving the 3-D Poisson equation in cylindrical coordinates.
2：Sample Selection and Data Sources:
The research focuses on SOI lateral double-diffused MOS (LDMOS) devices with multifinger or circular layouts.
3：List of Experimental Equipment and Materials:
The study uses MEDICI, a commercial TCAD tool, for simulations.
4：Experimental Procedures and Operational Workflow:
The model is verified by comparing modeling results with simulation results from MEDICI.
5：Data Analysis Methods:
The analysis involves examining the surface electric field profile and breakdown voltage under various structure parameters.
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