研究目的
To enhance the EL performances of blue emitter FIr6 by optimizing device structure reasonably, focusing on improving the injection and transport of holes to achieve balanced distribution of carriers.
研究成果
Highly efficient blue EL device with the maximum current efficiency, power efficiency, external quantum efficiency (EQE) and brightness up to 39.14 cd/A, 38.68 lm/W, 24.6% and 17201 cd/m2, respectively, was obtained. The operation voltage of the device was significantly reduced.
研究不足
The technical and application constraints of the experiments, as well as potential areas for optimization, were not explicitly mentioned in the paper.
1：Experimental Design and Method Selection
Utilized p-type dopant HAT-CN as hole injection layer material and doped HAT-CN into hole transport layer (HTL). Inserted thin TcTa film between HTL and light-emitting layer (EML) to improve the transport of holes.
2：Sample Selection and Data Sources
All the organic materials used in this study were obtained commercially and used as received without further purification. Indium-tin-oxide (ITO) coated glass with a sheet resistance of 10 Ω/sq was used as the anode substrate.
3：List of Experimental Equipment and Materials
Organic materials, ITO coated glass, MoO3, LiF, Al, HAT-CN, FIr6, CzSi, Tm3PyP26PyB, TcTa.
4：Experimental Procedures and Operational Workflow
All the organic layers were deposited with the rate of 0.1 nm/s under high vacuum. The EMLs were prepared by co-evaporating FIr6 and host material from two individual sources. MoO3, LiF and Al were deposited in another vacuum chamber.
5：Data Analysis Methods
Current density-brightness-voltage (J-B-V) characteristics were measured by using a programmable Keithley source measurement unit. The EL spectra were measured with a calibrated Hitachi F-7000 fluorescence spectrophotometer.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容-
Hitachi F-7000
F-7000
Hitachi
Used for EL spectra measurement.
-
Keithley 2400
2400
Keithley
Used for current density-brightness-voltage (J-B-V) characteristics measurement.
-
Keithley 2000
2000
Keithley
Used for current density-brightness-voltage (J-B-V) characteristics measurement.
-
FIr6
Blue phosphorescent material used as the emitter in the EL devices.
-
HAT-CN
P-type dopant used as hole injection layer material and doped into hole transport layer (HTL) to improve the injection and transport of holes.
-
TcTa
Inserted between HTL and light-emitting layer (EML) to facilitate the transport of holes.
-
CzSi
Used as the host material due to its high triplet energy and wide energy gap.
-
Tm3PyP26PyB
Used as electron transport/hole block layer (ETL/HBL) material due to its low-lying HOMO level and excellent electron transport ability.
-
MoO3
Used to effectively improve the injection of holes.
-
LiF
Used in the cathode layer.
-
Al
Used as the cathode material.
-
ITO
Used as the anode substrate.
-
登录查看剩余10件设备及参数对照表
查看全部
