研究目的
Investigating a facile method to optimize the deposition condition for the passivation layer preparation in a-Si/c-Si heterojunction solar cells by monitoring its growth rate and calculating its second-order derivative with regard to the corresponding deposition parameter.
研究成果
A facile method was proposed to optimize the deposition condition for the passivation layer preparation during the a-Si/c-Si heterojunction solar cell fabrication by monitoring the growth rate R of the passivation layer and calculating the second-order derivative of R with regard to the corresponding deposition parameter. When the second-order derivative of R presents an extremum, the corresponding value of the considered deposition parameter can be determined as its optimized choice.
研究不足
The accuracy of lifetime measurement can be affected greatly by the bulk and surface quality of the c-Si wafer. Both Raman and FTIR characterizations need some complicated analysis. The optimization process is time-consuming and laborious.
1：Experimental Design and Method Selection:
PECVD was utilized to prepare the thin film silicon passivation layer via changing the deposition condition, such as substrate temperature, gas flux, plasma excitation power, and deposition pressure.
2：Sample Selection and Data Sources:
Two samples were prepared at the same time with each condition. One sample was prepared with the passivation layer on both sides of c-Si substrate for the τeff measurement via Sinton WCT-
3：Another sample was deposited on Corning glass for the growth rate calculation by the thickness measurement via Sentech ellipsometer (SE). List of Experimental Equipment and Materials:
1 Sinton WCT-120, Sentech ellipsometer (SE), Corning glass, c-Si substrates, aqueous NaOH solution, RCA cleaning processes, dilute HF solution.
4：Experimental Procedures and Operational Workflow:
The c-Si substrates were chemically polished in the about 20% aqueous NaOH solution to remove the raw damaged surface. Then, the standard RCA cleaning processes were carried out, followed by 1% dilute HF solution dipping to remove the native oxide. The glass substrates were degreased in turn by diluted HCl solution and DI water.
5：Data Analysis Methods:
The passivation performance was measured via Sinton WCT-120, and the growth rate was calculated by the thickness measurement via Sentech ellipsometer (SE).
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