研究目的
Investigating the impact of total ionizing dose (TID) and stress-induced defects on metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs) through a physics-based compact modeling approach.
研究成果
The presented physics-based compact modeling approach effectively incorporates the impact of TID and stress-induced defects into simulations of MOS devices and ICs. The approach is verified through comparisons with TCAD simulations and experimental data, demonstrating its suitability for simulating TID and aging effects in advanced MOS devices and ICs. The modeling approach is compatible with modern MOSFET compact modeling techniques and provides a foundation for further research in radiation effects mitigation and reliability studies.
研究不足
The study focuses on the impact of TID and aging effects in MOS devices and ICs, with specific emphasis on bulk and SOI MOS devices. The modeling approach may require further validation for other types of semiconductor devices and under different radiation conditions.
1：Experimental Design and Method Selection:
The study employs a physics-based compact modeling approach to incorporate the impact of TID and stress-induced defects into simulations of MOS devices and ICs. The approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps.
2：Sample Selection and Data Sources:
The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS devices. The formulation is verified using TCAD simulations and experimental I-V characteristics from irradiated devices.
3：List of Experimental Equipment and Materials:
The study involves MOS devices and ICs, with specific focus on bulk and SOI MOS devices.
4：Experimental Procedures and Operational Workflow:
The methodology involves calculating surface potential to describe the impact of radiation and stress-induced defects on MOS electrostatics and device operating characteristics. The approach is verified through comparisons with TCAD simulations and experimental data.
5：Data Analysis Methods:
The analysis involves comparing model calculations with TCAD simulations and experimental data to verify the accuracy of the modeling approach.
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