1：Experimental Design and Method Selection:

The study utilized pulsed laser deposition (PLD) to fabricate a lateral CuInSe2/InSe isotype heterojunction on a flexible mica substrate. The PLD technique was chosen for its advantages in maintaining stoichiometry and controlling film thickness.

2：Sample Selection and Data Sources:

The samples were prepared by depositing InSe films on mica substrates with pre-patterned Cu or Au electrodes. The stoichiometry and phase of the films were analyzed using X-ray diffraction (XRD) and Raman spectroscopy.

3：List of Experimental Equipment and Materials:

Key equipment included a KrF excimer pulsed laser for PLD, XRD for structural analysis, Raman spectroscopy for vibrational analysis, scanning electron microscopy (SEM) for morphology observation, X-ray photoelectron spectroscopy (XPS) for chemical composition analysis, and atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) for surface potential and thickness measurements.

4：Experimental Procedures and Operational Workflow:

The InSe films were deposited on heated mica substrates under controlled argon pressure. The structural, chemical, and electronic properties of the heterojunction were systematically characterized.

5：Data Analysis Methods:

The electronic band structure and charge transfer mechanism were analyzed using KPFM results. The photoelectric properties were measured under laser illumination, and the performance under bending states was evaluated.