研究目的
To investigate the effects of ZrO2 interlayer prepared by UV treatment at room temperature on the performance of CH3NH3PbI3-xClx-based planar perovskite solar cells (PSCs), aiming to enhance photovoltaic performance through reduced trap states and suppressed carrier recombination at the ITO/SnO2 interface.
研究成果
The insertion of a UV-treated ZrO2 interlayer at the ITO/SnO2 interface significantly improves the performance of planar perovskite solar cells, achieving a champion efficiency of 19.48%. This enhancement is attributed to reduced trap states and suppressed carrier recombination. The study demonstrates a facile and effective method for modifying transparent conductive electrodes at room temperature, offering potential for high-performance PSC fabrication.
研究不足
The study does not extensively explore the long-term stability of the modified PSCs under operational conditions. Additionally, the scalability of the UV treatment process for large-area PSC fabrication is not addressed.
1：Experimental Design and Method Selection:
The study involved modifying the ITO/SnO2 interface with ZrO2 interlayer prepared by UV treatment at room temperature. The effects on PSC performance were systematically studied.
2：Sample Selection and Data Sources:
CH3NH3PbI3-xClx-based PSCs were used. The ZrO2 film was prepared using Zr(AC)4 precursor solutions with different concentrations.
3：List of Experimental Equipment and Materials:
Equipment included UV treatment setup, SEM, AFM, XRD, and photovoltaic measurement devices. Materials included ITO substrates, Zr(AC)4, SnO2, and perovskite materials.
4：Experimental Procedures and Operational Workflow:
The ZrO2 film was deposited on ITO substrates via spin-coating followed by UV treatment. The PSCs were fabricated with the structure ITO/ZrO2/SnO2/CH3NH3PbI3-xClx/Spiro-OMeTAD/Ag.
5：Data Analysis Methods:
Performance parameters (Voc, Jsc, FF, PCE) were measured. Structural and morphological characterizations were performed using SEM, AFM, and XRD. Photovoltaic properties were analyzed through J-V curves, EQE measurements, and stability tests.
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