研究目的
Investigating the effects of infrared (IR) radiative and resistive preheating of silicon wafers on the electrical properties of amorphous silicon–crystalline silicon (a-Si:H/c-Si) heterojunction solar cells.
研究成果
The IR radiative heating helps to avoid the S-shape in J–V characteristics but increases bulk defect states, limiting overall device performance. Resistive heating provides better a-Si:H/c-Si interface passivation but results in S-shape characteristics due to band offset. The study demonstrates the importance of preheating methods in determining the electrical properties of SHJ solar cells.
研究不足
The study is limited to the analysis of SHJ cells fabricated with specific preheating methods (IR radiative and resistive) and does not explore other potential preheating techniques or materials. The impact of varying other fabrication parameters on cell performance is not investigated.
1：Experimental Design and Method Selection:
The study involves fabricating SHJ cells with variations in Si wafer preheating (IR radiative vs. resistive) before a-Si:H layers deposition.
2：Sample Selection and Data Sources:
n-type monocrystalline Si wafers with specific resistivity, bulk minority carrier lifetime, and thickness are used.
3：List of Experimental Equipment and Materials:
RF-based plasma-enhanced chemical vapor deposition (PECVD) system, DC magnetron sputtering system, Oriel Sol3A Class AAA Solar Simulator, Keithley 2400 source measurement system, Sinton WCT-120TS measurement system, SpeQuest quantum efficiency system, CCS-400 cryostat.
4：Experimental Procedures and Operational Workflow:
Fabrication of SHJ cells, characterization under AM
5：5G illumination, Suns-Voc analysis, quantum efficiency measurements, temperature-dependent dark J–V measurements. Data Analysis Methods:
Analysis of J–V characteristics, Suns-Voc graphs, quantum efficiency spectra, and temperature-dependent dark J–V characteristics to understand carrier transport mechanisms.
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