研究目的
To systematically compare and analyze the performance differences between photovoltaic (PV) and photoconductive (PC) two-dimensional (2D) semiconductor photodetectors based on GeSe/2D semiconductor van der Waals heterostructures.
研究成果
The GeSe/MoS2 PV photodetector maintains steady photoresponse properties and a faster speed of photoresponse under reverse bias, due to minority carrier conduction in its depletion region. The GeSe/graphene PC photodetector achieves higher photoresponsivity (R) under increasing reverse bias. Understanding these differences is crucial for the rational design of 2D material photodetectors for various applications.
研究不足
The study focuses on the comparison between PV and PC photodetectors based on GeSe/2D semiconductor van der Waals heterostructures. The performance of these devices may vary under different fabrication conditions or with other 2D materials.
1：Experimental Design and Method Selection:
The study constructs a PV GeSe/MoS2 and a PC GeSe/graphene photodetector using mechanically exfoliated and manually stacked 2D semiconductor materials. The optoelectronic properties of these devices are systematically analyzed.
2：Sample Selection and Data Sources:
Multilayer MoS2 or graphene is directly stacked on the top of the GeSe nanoflake on a silicon dioxide (300 nm)/silicon substrate.
3：List of Experimental Equipment and Materials:
Electron beam lithography (EBL) for patterning the source/drain electrodes, and thermal evaporation for producing Cr/Au (15 nm/50 nm) source/drain electrodes.
4：Experimental Procedures and Operational Workflow:
The devices are fabricated using a dry physical transfer technique, followed by EBL and thermal evaporation. The thickness of GeSe, MoS2, and graphene is measured using an atomic force microscope (AFM).
5：Data Analysis Methods:
The charge transport and photoresponse properties of the devices are analyzed under different conditions, including varying source/drain voltages (Vds) and illumination intensities.
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