研究目的
To develop a firing-through paste for rear-side metallization of p-type monocrystalline silicon PERC solar cells that can effectively etch the rear-side passivation Al2O3 layer and the SiNx layer, achieving ohmic contact with low contact resistivity and high open-circuit voltage.
研究成果
Firing-through pastes with different etching capabilities were developed for rear-side metallization of p-type monocrystalline silicon PERC solar cells. Ohmic contact with a contact resistivity as low as 1 m?·cm2 was achieved. A p-type solar cell with an area of 7.8 × 7.8 cm2, a Voc of 0.6534 V, and an efficiency of 19.61% was fabricated, demonstrating the potential of firing-through paste for simplifying the solar cell fabrication process.
研究不足
Non-uniform etching reactions between the paste and the Al2O3/SiNx layers can lead to high-density recombination centers at the Si/paste interface, affecting the open-circuit voltage. The Al depth and doping uniformity obtained by the firing-through technique need further improvement.
