研究目的
Investigating the laser-induced formation of II–VI nanocrystals in zinc-doped As–S(Se) films and their characterization using Raman spectroscopy.
研究成果
Laser irradiation can induce the formation of ZnSe or ZnS nanocrystals in Zn-doped As–S(Se) films, with the process being facilitated by photoenhanced diffusion. UV laser light can also lead to the oxidation of the film surface, resulting in the formation of ZnO crystallites. The study demonstrates the potential for controlled nanocrystal formation in amorphous chalcogenide films using laser irradiation.
研究不足
The study is limited to the characterization of Zn-doped As–S(Se) films and the effects of laser irradiation on their structure. The exact size distribution of the nanocrystals and the kinetics of their formation are not fully explored.
1：Experimental Design and Method Selection:
Zn-doped As–S(Se) films were prepared by thermal evaporation. Their amorphous structure was confirmed by Raman spectroscopy. Laser irradiation was used to induce the formation of zinc chalcogenide nanocrystals.
2：Sample Selection and Data Sources:
Films were prepared from initial elemental components with a nominal Zn content from 1 to 12%.
3：2%. List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: A Horiba LabRAM HR800 spectrometer with a CCD camera was used for micro-Raman and PL studies. Excitation was provided by a He–Cd laser or solid-state lasers.
4：Experimental Procedures and Operational Workflow:
The laser power was adjusted to observe the dynamics of photoinduced changes in the Raman spectra. For each measurement, a new spot was chosen on the film surface.
5：Data Analysis Methods:
Raman spectra were analyzed to identify the chemical composition of the binary NCs formed.
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