研究目的
Investigating the effect of electron-beam irradiation (EBI) on Ag reflector to improve the efficiency of flip-chip InGaN/GaN multiple-quantum-wells micro light-emitting diode (μ-LED) arrays.
研究成果
EBI on Ag reflector improves the grain size and crystal quality, leading to higher reflectance and enhanced optoelectronic performance of μ-LED arrays. The study demonstrates that EBI is a promising fabrication technology for improving the efficiency of next-generation flip-chip μ-LEDs.
研究不足
The study focuses on the impact of EBI on Ag reflector for μ-LED arrays, but does not explore the long-term stability or scalability of the EBI treatment for industrial applications.
1：Experimental Design and Method Selection:
The study involves the fabrication of flip-chip μ-LED arrays with and without EBI on Ag reflector to investigate the impact on optoelectronic properties.
2：Sample Selection and Data Sources:
InGaN/GaN-based blue LEDs epitaxial layers were grown on c-plane patterned sapphire substrate by metal-organic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
Equipment includes MOCVD for epitaxial growth, ICP-RIE for mesa etching, e-beam evaporator for depositing reflective and contact electrodes, and various characterization tools like FE-SEM, EBSD, XRD, UV/Vis spectroscopy, and a Keithley 4145B Source meter.
4：Experimental Procedures and Operational Workflow:
The process includes epitaxial growth, mesa etching, deposition of reflective and contact layers, EBI treatment, and fabrication of μ-LED arrays.
5：Data Analysis Methods:
Reflectance, I-V characteristics, EL intensity, and EQE were measured and analyzed to evaluate the performance of μ-LEDs.
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x-ray diffractometer
XRD
Rigaku Ultima IV
Examination of morphological and agglomeration properties
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UV/Vis spectroscopy
PerkinElmer Lambda 35
PerkinElmer
Measurement of reflectance characteristics
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Source meter
Keithley 4145B
Keithley
Measurement of I-V characteristics
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metal-organic chemical vapor deposition
MOCVD
Epitaxial growth of InGaN/GaN-based blue LEDs
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inductively coupled plasma-reactive ion etching
ICP-RIE
Mesa etching of LED patterns
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e-beam evaporator
Deposition of reflective and contact electrodes
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Field emission-scanning electron microscopy
FE-SEM
Examination of morphological and agglomeration properties
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electron backscatter diffraction
EBSD
Examination of morphological and agglomeration properties
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fiber-optic spectrometer
AvaSpec-2048
Measurement of emission wavelength and peak-wavelength characteristics
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