研究目的

Investigating the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and reporting the experimental results of Si MOSFET impedance in THz regime.

研究成果

The study demonstrates significant performance enhancement of plasmonic THz detectors based on low-impedance MOSFETs with monolithic integrated antennas. The findings provide a guideline for designing FET plasmonic THz detectors in low impedance ranges, emphasizing the importance of both external impedance and internal plasmonics of the non-quasi-static channel electron density modulation.

研究不足

The study is limited to the 0.2-THz frequency regime and focuses on Si MOSFETs with specific dimensions and impedances. The performance enhancement is compared against detectors without antennas, and the study does not explore higher frequency regimes or different materials.